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NTMFS5H400NLT1G
onsemi

NTMFS5H400NLT1G

MFR #NTMFS5H400NLT1G

FPN#NTMFS5H400NLT1G-FL

MFRonsemi

Part DescriptionN-Channel 40 V 46A (Ta), 330A (Tc) 3.3W (Ta), 160W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
56761-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS5H400NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance7700pF
Input Capacitance Test Voltage20V
Life Cycle StatusActive
Maximum Continuous Drain Current46A (Ta), 330A (Tc)
Maximum Drain to Source Resistance800 µOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.3W (Ta), 160W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge11nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge19nC
Typical Gate to Source Charge20nC