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NTMFS5C646NLT1G
onsemi

NTMFS5C646NLT1G

MFR #NTMFS5C646NLT1G

FPN#NTMFS5C646NLT1G-FL

MFRonsemi

Part DescriptionN-Channel 60 V 19A (Ta) 3.7W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
99059-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS5C646NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2164pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current20A (Ta), 93A (Tc)
Maximum Drain to Source Resistance4.7 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.7W (Ta), 79W (Tc)
Maximum Pulse Drain Current750A
Maximum Total Gate Charge33.7nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.1nC
Typical Gate to Source Charge5.1nC