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NTMFS4H013NFT1G
onsemi

NTMFS4H013NFT1G

MFR #NTMFS4H013NFT1G

FPN#NTMFS4H013NFT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 25V 43A(Ta) 269A(Tc) 2.7W(Ta) 104W(Tc) Surface Mount, 5-DFN
Datasheet
100346-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4H013NF
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3923pF
Input Capacitance Test Voltage12V
Life Cycle StatusObsolete
Maximum Continuous Drain Current43A (Ta), 269A (Tc)
Maximum Drain to Source Resistance900 µOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.7W (Ta), 104W (Tc)
Maximum Pulse Drain Current505A
Maximum Total Gate Charge56nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.8nC
Typical Gate to Source Charge10.7nC