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NTMFS4C808NT1G-01
onsemi

NTMFS4C808NT1G-01

MFR #NTMFS4C808NT1G-01

FPN#NTMFS4C808NT1G-01-FL

MFRonsemi

Datasheet
56741-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C808N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete (Unconfirmed)
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1670pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete (Unconfirmed)
Maximum Continuous Drain Current9A (Ta)
Maximum Drain to Source Resistance4.8 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation760mW (Ta)
Maximum Pulse Drain Current144A
Maximum Total Gate Charge8.4nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.3nC
Typical Gate to Source Charge3.5nC