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NTMFS4C805NAT3G-01
onsemi

NTMFS4C805NAT3G-01

MFR #NTMFS4C805NAT3G-01

FPN#NTMFS4C805NAT3G-01-FL

MFRonsemi

Part DescriptionN-Channel 30 V 11.9A (Ta), 78A (Tc) 770mW (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
99047-Datasheet
Quote Onlymore info
Multiples of: 5000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C805NA
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1972pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current11.9A (Ta), 78A (Tc)
Maximum Drain to Source Resistance2.8 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation770mW (Ta), 33W (Tc)
Maximum Pulse Drain Current174A
Maximum Total Gate Charge30nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5nC
Typical Gate to Source Charge6nC