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NTMFS4C09NBT1G
onsemi

NTMFS4C09NBT1G

MFR #NTMFS4C09NBT1G

FPN#NTMFS4C09NBT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 9A(Ta) 52A(Tc) 760mW(Ta) 25.5W(Tc) Surface Mount, 5-DFN
Datasheet
99043-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C09N
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1252pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9A (Ta), 52A (Tc)
Maximum Drain to Source Resistance5.8 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation760mW (Ta), 25.5W (Tc)
Maximum Pulse Drain Current146A
Maximum Total Gate Charge10.9nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.4nC
Typical Gate to Source Charge5.4nC