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NTMFS4C029NT1G-01
onsemi

NTMFS4C029NT1G-01

MFR #NTMFS4C029NT1G-01

FPN#NTMFS4C029NT1G-01-FL

MFRonsemi

Part DescriptionN-Channel 30 V 15A (Ta), 46A (Tc) 2.49W (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
56722-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C029N
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance987pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current15A (Ta), 46A (Tc)
Maximum Drain to Source Resistance5.88 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.49W (Ta), 23.6W (Tc)
Maximum Pulse Drain Current132A
Maximum Total Gate Charge18.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.8nC
Typical Gate to Source Charge2.8nC