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NTMFS4C028NT1G
onsemi

NTMFS4C028NT1G

MFR #NTMFS4C028NT1G

FPN#NTMFS4C028NT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 16.4A (Ta) 52A (Tc) 2.51W (Ta) 25.5W (Tc) Surface Mount, 5-DFN
Datasheet
99040-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C028N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1252pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current16.4A (Ta), 52A (Tc)
Maximum Drain to Source Resistance4.73 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.51W (Ta), 25.5W (Tc)
Maximum Pulse Drain Current146A
Maximum Total Gate Charge22.2nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.4nC
Typical Gate to Source Charge3.4nC