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NTMFS4C028NT1G
onsemi

NTMFS4C028NT1G

MFR #NTMFS4C028NT1G

FPN#NTMFS4C028NT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 16.4A (Ta) 52A (Tc) 2.51W (Ta) 25.5W (Tc) Surface Mount, 5-DFN
Datasheet
99040-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C028N
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1252pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current16.4A (Ta), 52A (Tc)
Maximum Drain to Source Resistance4.73 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.51W (Ta), 25.5W (Tc)
Maximum Pulse Drain Current146A
Maximum Total Gate Charge22.2nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.4nC
Typical Gate to Source Charge3.4nC