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NTMFS4C027NAT1G
onsemi

NTMFS4C027NAT1G

MFR #NTMFS4C027NAT1G

FPN#NTMFS4C027NAT1G-FL

MFRonsemi

Part DescriptionN-Channel 30 V 9A (Ta), 52A (Tc) 760mW (Ta), 25.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
56720-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4C027N
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1670pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9A (Ta), 52A (Tc)
Maximum Drain to Source Resistance4.8 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation760mW (Ta), 25.5W (Tc)
Maximum Pulse Drain Current144A
Maximum Total Gate Charge18.2nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.3nC
Typical Gate to Source Charge3.5nC