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NTMFS4983NFT1G
onsemi

NTMFS4983NFT1G

MFR #NTMFS4983NFT1G

FPN#NTMFS4983NFT1G-FL

MFRonsemi

Part DescriptionPower Field-Effect Transistor, 22A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
192779-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4983NF
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3250pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current22A (Ta), 106A (Tc)
Maximum Drain to Source Resistance2.1 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.7W (Ta), 38W (Tc)
Maximum Pulse Drain Current320A
Maximum Total Gate Charge47.9nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.9nC
Typical Gate to Source Charge6.9nC