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NTMFS4983NFT1G
MFR #NTMFS4983NFT1G
FPN#NTMFS4983NFT1G-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 22A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NTMFS4983NF | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 1500 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 30V | 
| Drive Voltage | 4.5V, 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 3250pF | 
| Input Capacitance Test Voltage | 15V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 22A (Ta), 106A (Tc) | 
| Maximum Drain to Source Resistance | 2.1 mOhm @ 30A, 10V | 
| Maximum Gate to Source Threshold Voltage | 2.3V @ 1mA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 1.7W (Ta), 38W (Tc) | 
| Maximum Pulse Drain Current | 320A | 
| Maximum Total Gate Charge | 47.9nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Package Type | 5-DFN (5x6) (8-SOFL) | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 6.9nC | 
| Typical Gate to Source Charge | 6.9nC | 
