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NTMFS4935NT1G-IRH1
onsemi

NTMFS4935NT1G-IRH1

MFR #NTMFS4935NT1G-IRH1

FPN#NTMFS4935NT1G-IRH1-FL

MFRonsemi

Part DescriptionN-Channel 30 V 13A (Ta), 93A (Tc) 930mW (Ta), 48W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
100343-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS4935N
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance4850pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current13A (Ta), 93A (Tc)
Maximum Drain to Source Resistance3.2 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation930mW (Ta), 48W (Tc)
Maximum Pulse Drain Current275A
Maximum Total Gate Charge49.4nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3nC
Typical Gate to Source Charge10.2nC