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NTMFS1D1N04XMT1G
onsemi

NTMFS1D1N04XMT1G

MFR #NTMFS1D1N04XMT1G

FPN#NTMFS1D1N04XMT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 40V 44A(Ta) 233A(Tc) 104W(Tc) Surface Mount, 5-DFN
Datasheet
168540-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS1D1N04XM
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type5-DFN (5x6) (8-SOFL)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3138pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current44A (Ta), 233A (Tc)
Maximum Drain to Source Resistance1.05 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 120µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation104W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge49.3nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9.4nC
Typical Gate to Source Charge14.2nC