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NTMFS0D8N02P1ET1G
onsemi

NTMFS0D8N02P1ET1G

MFR #NTMFS0D8N02P1ET1G

FPN#NTMFS0D8N02P1ET1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 25 V 55A (Ta), 365A (Tc) 3.2W (Ta), 139W (Tc) Surface Mount, 5-DFN
Datasheet
56694-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS0D8N02P1E
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+16V, -12V
Input Capacitance8600pF
Input Capacitance Test Voltage13V
Life Cycle StatusActive
Maximum Continuous Drain Current55A (Ta), 365A (Tc)
Maximum Drain to Source Resistance680 µOhm @ 46A, 10V
Maximum Gate to Source Threshold Voltage2V @ 2mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.2W (Ta), 139W (Tc)
Maximum Pulse Drain Current762A
Maximum Total Gate Charge52nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9nC
Typical Gate to Source Charge21nC