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NTMFS0D7N03CGT1G
onsemi

NTMFS0D7N03CGT1G

MFR #NTMFS0D7N03CGT1G

FPN#NTMFS0D7N03CGT1G-FL

MFRonsemi

Part DescriptionMOSFET N-CH 30V 59A/409A 5DFN
Datasheet
99034-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS0D7N03CG
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type5-DFN (5x6) (8-SOFL)
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance12300pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current59A (Ta), 409A (Tc)
Maximum Drain to Source Resistance650 µOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 280µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation4W (Ta), 187W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge147nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.6nC
Typical Gate to Source Charge34nC