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NTMFS0D55N03CGT1G-01
onsemi

NTMFS0D55N03CGT1G-01

MFR #NTMFS0D55N03CGT1G-01

FPN#NTMFS0D55N03CGT1G-01-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 35A (Ta) 1.1W (Ta) Surface Mount, 5-DFN
Datasheet
99033-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS0D55N03CG
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance18500pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current35A (Ta), 462A (Tc)
Maximum Drain to Source Resistance580 µOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 330µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.1W (Ta), 199W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge224.9nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11nC
Typical Gate to Source Charge39nC