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NTMFS0D55N03CGT1G-01
onsemi

NTMFS0D55N03CGT1G-01

MFR #NTMFS0D55N03CGT1G-01

FPN#NTMFS0D55N03CGT1G-01-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 35A (Ta) 1.1W (Ta) Surface Mount, 5-DFN
Datasheet
99033-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS0D55N03CG
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance18500pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current35A (Ta), 462A (Tc)
Maximum Drain to Source Resistance580 µOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 330µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation1.1W (Ta), 199W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge224.9nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11nC
Typical Gate to Source Charge39nC