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NTMFS006N12MCT1G
onsemi

NTMFS006N12MCT1G

MFR #NTMFS006N12MCT1G

FPN#NTMFS006N12MCT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 120V 15A (Ta), 93A (Tc) 8-SON T/R
Datasheet
96753-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS006N12MC
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage120V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3365pF
Input Capacitance Test Voltage60V
Life Cycle StatusActive
Maximum Continuous Drain Current15A (Ta), 93A (Tc)
Maximum Drain to Source Resistance6 mOhm @ 46A, 10V
Maximum Gate to Source Threshold Voltage4V @ 260µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.7W (Ta), 104W (Tc)
Maximum Pulse Drain Current522A
Maximum Total Gate Charge42nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.3nC
Typical Gate to Source Charge16nC