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NTMFS005P03P8ZST1G
MFR #NTMFS005P03P8ZST1G
FPN#NTMFS005P03P8ZST1G-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 30V 15.3A(Ta) 900mW(Ta) Surface Mount, 5-DFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTMFS005P03P8Z |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Active (Unconfirmed) |
RoHS | Compliant |
RoHS Exemption Type | RoHS (2015/863), Unknown |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | P-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 4.5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±25V |
Input Capacitance | 7880pF |
Input Capacitance Test Voltage | 15V |
Life Cycle Status | Active (Unconfirmed) |
Maximum Continuous Drain Current | 15.3A (Ta) |
Maximum Drain to Source Resistance | 2.7 mOhm @ 22A, 10V |
Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 900mW (Ta) |
Maximum Pulse Drain Current | 597A |
Maximum Total Gate Charge | 183nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 5-DFN (5x6) (8-SOFL) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 76nC |
Typical Gate to Source Charge | 16nC |