(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTMFS002N10MCLT1G
onsemi

NTMFS002N10MCLT1G

MFR #NTMFS002N10MCLT1G

FPN#NTMFS002N10MCLT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 22A (Ta), 175A (Tc) 8-SON T/R
Datasheet
165708-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFS002N10MCL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance7200pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current22A (Ta), 175A (Tc)
Maximum Drain to Source Resistance2.8 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage3V @ 351µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3W (Ta), 189W (Tc)
Maximum Pulse Drain Current1.536kA
Maximum Total Gate Charge97nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge10nC
Typical Gate to Source Charge20nC