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NTMFD6H852NLT1G
onsemi

NTMFD6H852NLT1G

MFR #NTMFD6H852NLT1G

FPN#NTMFD6H852NLT1G-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) 80V 295mA 250mW (Ta) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Datasheet
56688-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFD6H852NL
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusActive
RoHSCompliant, Compliant with Exemption
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage80V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance521pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current7A (Ta), 25A (Tc)
Maximum Drain to Source Resistance25.5 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2V @ 26µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.2W (Ta), 38W (Tc)
Maximum Pulse Drain Current98A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.7nC
Typical Gate to Source Charge1.9nC