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NTMFD5877NLT1G
MFR #NTMFD5877NLT1G
FPN#NTMFD5877NLT1G-FL
MFRonsemi
Part DescriptionMOSFET 2 N-Channel 60V 17A (Ta) 8-SON
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTMFD5877NL |
Packaging Type | Tape and Reel |
Packaging Quantity | 1500 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 4.5V, 10V |
FET Feature | Logic Level Gate |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±20V |
Input Capacitance | 540pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 17A (Ta) |
Maximum Drain to Source Resistance | 39 mOhm @ 7.5A, 10V |
Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 3.2W (Ta), 23W (Tc) |
Maximum Pulse Drain Current | 74A |
Maximum Total Gate Charge | 5.9nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 2.8nC |
Typical Gate to Source Charge | 1.64nC |