(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTMFD4C820NAT1G
onsemi

NTMFD4C820NAT1G

MFR #NTMFD4C820NAT1G

FPN#NTMFD4C820NAT1G-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) 30V 9.1A (Ta), 13.7A (Ta) 1.09W (Ta), 1.15W (Ta) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Datasheet
56683-Datasheet
Quote Onlymore info
Multiples of: 1500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFD4C820NA
Packaging TypeTape and Reel
Packaging Quantity1500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance970pF, 1950pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9.1A (Ta), 13.7A (Ta)
Maximum Drain to Source Resistance7.3 mOhm @ 10A, 10V, 3.4 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.09W (Ta), 1.15W (Ta)
Maximum Pulse Drain Current55A, 82A
Maximum Total Gate Charge19nC, 29nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.2nC, 3nC
Typical Gate to Source Charge3.3nC, 6nC