(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTMFD2D4N03P8
onsemi

NTMFD2D4N03P8

MFR #NTMFD2D4N03P8

FPN#NTMFD2D4N03P8-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 30V 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc) 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc) Surface Mount 8-PQFN (5x6)
Datasheet
56681-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFD2D4N03P8
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (Unconfirmed)
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V, ±12V
Input Capacitance1715pF, 3825pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive (Unconfirmed)
Maximum Continuous Drain Current17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
Maximum Drain to Source Resistance5 mOhm @ 17A, 10V, 2.4 mOhm @ 25A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA, 3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
Maximum Pulse Drain Current227A, 503A
Maximum Total Gate Charge24nC, 55nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC, 4.3nC
Typical Gate to Source Charge3.1nC, 6.1nC