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NTMFD1D6N03P8
onsemi

NTMFD1D6N03P8

MFR #NTMFD1D6N03P8

FPN#NTMFD1D6N03P8-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel Array 30V 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc) 8-SON
Datasheet
56680-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFD1D6N03P8
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V, ±12V
Input Capacitance1715pF, 6430pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc)
Maximum Drain to Source Resistance5 mOhm @ 17A, 10V, 1.6 mOhm @ 32A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA, 3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc)
Maximum Pulse Drain Current227A, 704A
Maximum Total Gate Charge24nC, 87nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC, 5.3nC
Typical Gate to Source Charge3.1nC, 11nC