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NTMFD1D4N02P1E
onsemi

NTMFD1D4N02P1E

MFR #NTMFD1D4N02P1E

FPN#NTMFD1D4N02P1E-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 25V 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc) 960mW (Ta), 1W (Ta) Surface Mount 8-PQFN (5x6)
Datasheet
56679-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFD1D4N02P1E
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage+16V, -12V
Input Capacitance1180pF, 3603pF
Input Capacitance Test Voltage13V
Life Cycle StatusActive
Maximum Continuous Drain Current13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
Maximum Drain to Source Resistance3.3 mOhm @ 20A, 10V, 1.1 mOhm @ 37A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA, 2V @ 800µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation960mW (Ta), 1W (Ta)
Maximum Pulse Drain Current325A, 552A
Maximum Total Gate Charge7.2nC, 21.5nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.35nC, 3.9nC
Typical Gate to Source Charge3.15nC, 9.1nC