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NTMFD0D9N02P1E
onsemi

NTMFD0D9N02P1E

MFR #NTMFD0D9N02P1E

FPN#NTMFD0D9N02P1E-FL

MFRonsemi

Part DescriptionMOSFET Array 30V, 25V 14A (Ta), 30A (Ta) 960mW (Ta), 1.04W (Ta) Surface Mount, 8-PQFN
Datasheet
56678-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFD0D9N02P1E
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V, 25V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage+16V, -12V
Input Capacitance1400pF, 5050pF
Input Capacitance Test Voltage15V, 13V
Life Cycle StatusActive
Maximum Continuous Drain Current14A (Ta), 30A (Ta)
Maximum Drain to Source Resistance3 mOhm @ 20A, 10V, 720 µOhm @ 41A, 10V
Maximum Gate to Source Threshold Voltage2V @ 340µA, 2V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation960mW (Ta), 1.04W (Ta)
Maximum Pulse Drain Current356A, 1.023kA
Maximum Total Gate Charge9nC, 30nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC, 6nC
Typical Gate to Source Charge4nC, 13nC