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NTMFD001N03P9
onsemi

NTMFD001N03P9

MFR #NTMFD001N03P9

FPN#NTMFD001N03P9-FL

MFRonsemi

Part DescriptionPOWER MOSFET, N-CHANNEL POWERTRE
Datasheet
99029-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFD001N03P9
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsAsymmetrical
FET TypeArray
Gate to Source Voltage±20V, +16V, -12V
Input Capacitance1224pF, 6575pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Maximum Drain to Source Resistance5 mOhm @ 17A, 10V, 1 mOhm @ 40A, 10V
Maximum Gate to Source Threshold Voltage3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Maximum Pulse Drain Current300A, 500A
Maximum Total Gate Charge7.9nC, 43nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC, 9.5nC
Typical Gate to Source Charge3.1nC, 15.8nC