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NTMFC013NP10M5L
onsemi

NTMFC013NP10M5L

MFR #NTMFC013NP10M5L

FPN#NTMFC013NP10M5L-FL

MFRonsemi

Part DescriptionMosfet Array 100V 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc) 2.7W (Ta), 102W (Tc) Surface Mount 8-WDFN (5x6)
Datasheet
56676-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMFC013NP10M5L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V, 6V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1345pF, 2443pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Maximum Drain to Source Resistance13.4 mOhm @ 8.5A, 10V, 36 mOhm @ 8.5A, 10V
Maximum Gate to Source Threshold Voltage3V @ 158µA, 4V @ 158µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.7W (Ta), 102W (Tc)
Maximum Pulse Drain Current208A, 184A
Maximum Total Gate Charge23nCnC, 30nC
Maximum Total Gate Charge Test Voltage4.5V, 10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (5x6)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5nC, 5.1nC
Typical Gate to Source Charge4.7nC, 10.4nC