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NTMD6N03R2G
onsemi

NTMD6N03R2G

MFR #NTMD6N03R2G

FPN#NTMD6N03R2G-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel Array 30V 6A, 8-SOIC
Datasheet
56675-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMD6N03R2
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance950pF
Input Capacitance Test Voltage24V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6A
Maximum Drain to Source Resistance32 mOhm @ 6A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.29W
Maximum Pulse Drain Current30A
Maximum Total Gate Charge30nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A