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NTMC083NP10M5L
onsemi

NTMC083NP10M5L

MFR #NTMC083NP10M5L

FPN#NTMC083NP10M5L-FL

MFRonsemi

Part DescriptionMosfet Array 100V 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc) 1.6W (Ta), 3.1W (Tc) Surface Mount 8-SOIC
Datasheet
99028-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTMC083NP10M5L
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage100V
Drive Voltage4.5V, 10V, 6V, 110V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance222pF, 525pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
Maximum Drain to Source Resistance83 mOhm @ 1.5A, 10V, 131 mOhm @ 1.5A, 110V
Maximum Gate to Source Threshold Voltage3V @ 28µA, 4V @ 28µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta), 3.1W (Tc)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge5nC, 8.4nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 61% from Suppliers use this Dimension
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1nC, 1.3nC
Typical Gate to Source Charge900pC, 2.7nC