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NTLUS3C18PZTAG
MFR #NTLUS3C18PZTAG
FPN#NTLUS3C18PZTAG-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 12V 4.4A (Ta) 6-SON T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | NTLUS3C18PZ | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 3000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| ROHS China | Compliant | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | P-Channel | 
| Drain Source Voltage | 12V | 
| Drive Voltage | 1.8V, 4.5V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±10V | 
| Input Capacitance | 1570pF | 
| Input Capacitance Test Voltage | 6V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 4.4A (Ta) | 
| Maximum Drain to Source Resistance | 24 mOhm @ 7A, 4.5V | 
| Maximum Gate to Source Threshold Voltage | 1V @ 250µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 660mW (Ta) | 
| Maximum Pulse Drain Current | 21A | 
| Maximum Total Gate Charge | 15.8nC | 
| Maximum Total Gate Charge Test Voltage | 4.5V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Package Type | 6-UDFN (1.6x1.6) | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 15.8nC | 
| Typical Gate to Source Charge | 1.9nC | 
