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NTLJS5D0N03CTAG

MFR #NTLJS5D0N03CTAG

FPN#NTLJS5D0N03CTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 11.2A (Ta) 860mW (Ta) Surface Mount, 6-PQFN
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTLJS5D0N03C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1255pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current11.2A (Ta)
Maximum Drain to Source Resistance4.38 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation860mW (Ta)
Maximum Pulse Drain Current75A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type6-PQFN (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC
Typical Gate to Source Charge3nC