
NTLJS5D0N03CTAG
MFR #NTLJS5D0N03CTAG
FPN#NTLJS5D0N03CTAG-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 30V 11.2A (Ta) 860mW (Ta) Surface Mount, 6-PQFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTLJS5D0N03C |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 4.5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 1255pF |
Input Capacitance Test Voltage | 15V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 11.2A (Ta) |
Maximum Drain to Source Resistance | 4.38 mOhm @ 10A, 10V |
Maximum Gate to Source Threshold Voltage | 2.2V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 860mW (Ta) |
Maximum Pulse Drain Current | 75A |
Maximum Total Gate Charge | 18nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 6-PQFN (2x2) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 2nC |
Typical Gate to Source Charge | 3nC |