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onsemi

NTLJS3D9N03CTAG

MFR #NTLJS3D9N03CTAG

FPN#NTLJS3D9N03CTAG-FL

MFRonsemi

Part DescriptionN-Channel 30 V 4.5A (Ta) 640mW (Ta) Surface Mount 6-UDFN (1.6x1.6)
Datasheet
56660-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTLJS3D9N03C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance1565pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10.3A (Ta)
Maximum Drain to Source Resistance4.9 mOhm @ 10A, 4.5V
Maximum Gate to Source Threshold Voltage1.1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation860mW (Ta)
Maximum Pulse Drain Current71A
Maximum Total Gate Charge14.7nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-PQFN (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.29nC
Typical Gate to Source Charge2.31nC