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NTLJS3113PT1G
onsemi

NTLJS3113PT1G

MFR #NTLJS3113PT1G

FPN#NTLJS3113PT1G-FL

MFRonsemi

Part DescriptionP-Channel 20 V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Datasheet
56659-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTLJS3113P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance1329pF
Input Capacitance Test Voltage16V
Life Cycle StatusObsolete
Maximum Continuous Drain Current3.5A (Ta)
Maximum Drain to Source Resistance40 mOhm @ 3A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation700mW (Ta)
Maximum Pulse Drain Current23A
Maximum Total Gate Charge15.7nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 74% from Suppliers use this Dimension
Package Type6-WDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.9nC
Typical Gate to Source Charge2.9nC