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NTLJF4156NTAG
onsemi

NTLJF4156NTAG

MFR #NTLJF4156NTAG

FPN#NTLJF4156NTAG-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 2.5A (Tj) 6-SON T/R
Datasheet
145143-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTLJF4156N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage1.5V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance427pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current2.5A (Tj)
Maximum Drain to Source Resistance70 mOhm @ 2A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation710mW (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge6.5nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 74% from Suppliers use this Dimension
Package Type6-WDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.24nC
Typical Gate to Source Charge800pC