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NTK3139PT5G
onsemi

NTK3139PT5G

MFR #NTK3139PT5G

FPN#NTK3139PT5G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 660mA(Ta) 310mW(Ta) Surface Mount, SOT-723-3
Datasheet
56657-Datasheet
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTK3139P
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±6V
Input Capacitance170pF
Input Capacitance Test Voltage16V
Life Cycle StatusActive
Maximum Continuous Drain Current660mA (Ta)
Maximum Drain to Source Resistance480 mOhm @ 780mA, 4.5V
Maximum Gate to Source Threshold Voltage1.2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation310mW (Ta)
Maximum Pulse Drain Current1.2A
Maximum Total Gate ChargeN/A
Maximum Total Gate Charge Test VoltageN/A
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-723
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A