NTJD4152PT1G
MFR #NTJD4152PT1G
FPN#NTJD4152PT1G-FL
MFRonsemi
Part DescriptionMosfet Array 2 P-Channel (Dual) 20V 880mA 272mW Surface Mount, SOT-363
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTJD4152P |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 1.8V, 4.5V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 155pF |
| Input Capacitance Test Voltage | 20V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 880mA (Ta) |
| Maximum Drain to Source Resistance | 260 mOhm @ 880mA, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.2V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 272mW (Ta) |
| Maximum Pulse Drain Current | 3A |
| Maximum Total Gate Charge | 2.2nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| PK Package Dimensions Note | Popular package size 65% from Suppliers use this Dimension |
| Package Type | SC-88/SC70-6/SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 650pC |
| Typical Gate to Source Charge | 500pC |