onsemi
NTJD4105CT2G
MFR #NTJD4105CT2G
FPN#NTJD4105CT2G-FL
MFRonsemi
Part DescriptionMosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTJD4105C |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N and P-Channel |
| Drain Source Voltage | 20V, 8V |
| Drive Voltage | 4.5V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±12V, ±8V |
| Input Capacitance | 46pF |
| Input Capacitance Test Voltage | 20V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 630mA, 775mA |
| Maximum Drain to Source Resistance | 375 mOhm @ 630mA, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 270mW |
| Maximum Pulse Drain Current | 1.2A |
| Maximum Total Gate Charge | 3nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| PK Package Dimensions Note | Popular package size 65% from Suppliers use this Dimension |
| Package Type | SC-88/SC70-6/SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 400pC |
| Typical Gate to Source Charge | 200pC, 500pC |