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onsemi

NTHS4166NT1G

MFR #NTHS4166NT1G

FPN#NTHS4166NT1G-FL

MFRonsemi

Part DescriptionN-Channel 30 V 4.9A (Ta) 800mW (Ta) Surface Mount ChipFET
Datasheet
56641-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTHS4166N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance900pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current4.9A (Ta)
Maximum Drain to Source Resistance22 mOhm @ 4.9A, 10V
Maximum Gate to Source Threshold Voltage2.3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation800mW (Ta)
Maximum Pulse Drain Current32A
Maximum Total Gate Charge18nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeChipFET™
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.84nC
Typical Gate to Source Charge2.86nC