NTHL020N090SC1
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTHL020N090SC1 |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 900V |
| Drive Voltage | 15V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | +22V, -8V |
| Input Capacitance | 4415pF |
| Input Capacitance Test Voltage | 450V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 118A (Tc) |
| Maximum Drain to Source Resistance | 28 mOhm @ 60A, 15V |
| Maximum Gate to Source Threshold Voltage | 4.3V @ 20mA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 503W (Tc) |
| Maximum Pulse Drain Current | 472A |
| Maximum Total Gate Charge | 196nC |
| Maximum Total Gate Charge Test Voltage | 15V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-247-3 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Typical Gate to Drain Charge | 55nC |
| Typical Gate to Source Charge | 78nC |