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onsemi

NTHD4502NT1G

MFR #NTHD4502NT1G

FPN#NTHD4502NT1G-FL

MFRonsemi

Part DescriptionMOSFET Array N-Channel 30V 2.2A Surface Mount, 8-SMD
Datasheet
148774-Datasheet
Quote Only
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Multiples of: 3000
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTHD4502N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeChipFET™
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance140pF
Input Capacitance Test Voltage15V
Maximum Continuous Drain Current2.2A
Maximum Drain to Source Resistance85 mOhm @ 2.9A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation640mW
Maximum Pulse Drain Current12A
Maximum Total Gate Charge7nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge700pC
Typical Gate to Source Charge600pC