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onsemi

NTHD3101FT1G

MFR #NTHD3101FT1G

FPN#NTHD3101FT1G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount, 8-SMD
Datasheet
100807-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTHD3101F
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance680pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current3.2A (Tj)
Maximum Drain to Source Resistance80 mOhm @ 3.2A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.1W (Ta)
Maximum Pulse Drain Current13A
Maximum Total Gate Charge7.4nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeChipFET™
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.5nC
Typical Gate to Source Charge1.4nC