NTHC5513T1G
MFR #NTHC5513T1G
FPN#NTHC5513T1G-FL
MFRonsemi
Part DescriptionMOSFET N and P-Channel 20V 2.9A, 2.2A Surface Mount, 8-SMD
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTHC5513 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N and P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 4.5V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | 12V |
| Input Capacitance | 180pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 2.9A, 2.2A |
| Maximum Drain to Source Resistance | 80 mOhm @ 2.9A, 4.5V, 155 mOhm @ 2.2A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.2V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.1W |
| Maximum Pulse Drain Current | 12A |
| Maximum Total Gate Charge | 4nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | ChipFET™ |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 700pC |
| Typical Gate to Source Charge | 600pC, 500pC |