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onsemi

NTH4LN067N65S3H

MFR #NTH4LN067N65S3H

FPN#NTH4LN067N65S3H-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 40A (Tc) through Hole, TO-247-4
Datasheet
137012-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTH4LN067N65S3H
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance3750pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current40A (Tc)
Maximum Drain to Source Resistance67 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage4V @ 3.9mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation266W (Tc)
Maximum Pulse Drain Current112A
Maximum Total Gate Charge80nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-4
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge20nC
Typical Gate to Source Charge21nC