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onsemi

NTH4L160N120SC1

MFR #NTH4L160N120SC1

FPN#NTH4L160N120SC1-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 1200V 17.3A (Tc) 111W (Tc) Through Hole, TO-247-4
Datasheet
150402-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTH4L160N120SC1
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage1.2kV
Drive Voltage20V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+25V, -15V
Input Capacitance665pF
Input Capacitance Test Voltage800V
Life Cycle StatusActive
Maximum Continuous Drain Current17.3A (Tc)
Maximum Drain to Source Resistance224 mOhm @ 12A, 20V
Maximum Gate to Source Threshold Voltage4.3V @ 2.5mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation111W (Tc)
Maximum Pulse Drain Current69A
Maximum Total Gate Charge34nC
Maximum Total Gate Charge Test Voltage20V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-4
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge9.6nC
Typical Gate to Source Charge12.5nC