(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

NTH4L045N065SC1

MFR #NTH4L045N065SC1

FPN#NTH4L045N065SC1-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 55A (Tc) TO247-4
Datasheet
119931-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTH4L045N065SC1
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage15V, 18V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+22V, -8V
Input Capacitance1870pF
Input Capacitance Test Voltage325V
Life Cycle StatusActive
Maximum Continuous Drain Current55A (Tc)
Maximum Drain to Source Resistance50 mOhm @ 25A, 18V
Maximum Gate to Source Threshold Voltage4.3V @ 8mA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation187W (Tc)
Maximum Pulse Drain Current197A
Maximum Total Gate Charge105nC
Maximum Total Gate Charge Test Voltage18V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-247-4
TechnologySiCFET (Silicon Carbide)
Typical Gate to Drain Charge30nC
Typical Gate to Source Charge27nC