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onsemi

NTH4L022N120M3S

MFR #NTH4L022N120M3S

FPN#NTH4L022N120M3S-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 1.2kV 89A (Tc) TO247-4
Datasheet
95823-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTH4L022N120M3S
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage1.2kV
Drive Voltage18V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+22V, -10V
Input Capacitance3175pF
Input Capacitance Test Voltage800V
Life Cycle StatusActive
Maximum Continuous Drain Current89A (Tc)
Maximum Drain to Source Resistance30 mOhm @ 40A, 18V
Maximum Gate to Source Threshold Voltage4.4V @ 20mA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation348W (Tc)
Maximum Pulse Drain Current275A
Maximum Total Gate Charge137nC
Maximum Total Gate Charge Test Voltage18V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-247-4
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge34nC
Typical Gate to Source Charge15nC