NTGD4167CT1G
MFR #NTGD4167CT1G
FPN#NTGD4167CT1G-FL
MFRonsemi
Part DescriptionMosfet Array N and P-Channel 30V 2.6A, 1.9A 900mW Surface Mount 6-TSOP
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTGD4167C |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N and P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | Standard |
| FET Options | Complementary |
| FET Type | Array |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 295pF, 419pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 2.6A (Ta), 1.9A (Ta) |
| Maximum Drain to Source Resistance | 90 mOhm @ 2.6A, 4.5V, 170 mOhm @ 1.9A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 900mW |
| Maximum Pulse Drain Current | 8.6A, 6.3A |
| Maximum Total Gate Charge | 5.5nC, 6nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 800pC, 1nC |
| Typical Gate to Source Charge | 900pC, 1nC |