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NTGD4167CT1G
onsemi

NTGD4167CT1G

MFR #NTGD4167CT1G

FPN#NTGD4167CT1G-FL

MFRonsemi

Part DescriptionMosfet Array N and P-Channel 30V 2.6A, 1.9A 900mW Surface Mount 6-TSOP
Datasheet
56622-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTGD4167C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage30V
Drive Voltage2.5V, 4.5V
FET FeatureStandard
FET OptionsComplementary
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance295pF, 419pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current2.6A (Ta), 1.9A (Ta)
Maximum Drain to Source Resistance90 mOhm @ 2.6A, 4.5V, 170 mOhm @ 1.9A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation900mW
Maximum Pulse Drain Current8.6A, 6.3A
Maximum Total Gate Charge5.5nC, 6nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type6-TSOP
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge800pC, 1nC
Typical Gate to Source Charge900pC, 1nC