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NTGD3148NT1G
onsemi

NTGD3148NT1G

MFR #NTGD3148NT1G

FPN#NTGD3148NT1G-FL

MFRonsemi

Part DescriptionMOSFET Array 2 N-Channel (Dual) 20V 3A 900mW Surface Mount, 6-TSOP
Datasheet
56621-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTGD3148N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance300pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current3A (Ta)
Maximum Drain to Source Resistance70 mOhm @ 3.5A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation900mW (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge3.8nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-50°C (TJ)
Package Type6-TSOP
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.1nC
Typical Gate to Source Charge700pC