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NTDS015N15MCT4G
MFR #NTDS015N15MCT4G
FPN#NTDS015N15MCT4G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 150V 11A(Ta) 50A(Tc) 3.8W(Ta) 83W(Tc) Surface Mount, TO-252-3
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTDS015N15MC |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 150V |
| Drive Voltage | 8V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 2120pF |
| Input Capacitance Test Voltage | 75V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 11A (Ta), 50A (Tc) |
| Maximum Drain to Source Resistance | 15 mOhm @ 29A, 10V |
| Maximum Gate to Source Threshold Voltage | 4.5V @ 162µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3.8W (Ta), 83W (Tc) |
| Maximum Pulse Drain Current | 246A |
| Maximum Total Gate Charge | 27nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 4nC |
| Typical Gate to Source Charge | 11nC |