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onsemi
NTD6416ANLT4G
MFR #NTD6416ANLT4G
FPN#NTD6416ANLT4G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 100V 19A(Tc) 71W(Tc) Surface Mount, TO-252-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTD6416AN |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | DPAK (SINGLE GAUGE) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 620pF |
| Input Capacitance Test Voltage | 25V |
| Maximum Continuous Drain Current | 17A (Tc) |
| Maximum Drain to Source Resistance | 81 mOhm @ 17A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 71W (Tc) |
| Maximum Pulse Drain Current | 62A |
| Maximum Total Gate Charge | 20nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 10nC |
| Typical Gate to Source Charge | 3.6nC |